The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
May. 24, 2005
Jun-xiu Liu, Taichung, TW;
Chi-hsuen Chang, Hsin-Chu, TW;
Tzu-chiang Sung, Jhubei, TW;
Chung-i Chen, Hsin-Chu, TW;
Chih Po Huang, Hsinchu, TW;
Jun-Xiu Liu, Taichung, TW;
Chi-Hsuen Chang, Hsin-Chu, TW;
Tzu-Chiang Sung, Jhubei, TW;
Chung-I Chen, Hsin-Chu, TW;
Chih Po Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes an isolation ring disposed on a semiconductor substrate, surrounding first and second circuit areas. A buried isolation layer is continuously extended through the first circuit area and the second circuit area, in the semiconductor substrate. The buried isolation layer interfaces with the isolation ring, thereby isolating the first and second circuit areas from a backside bias of the semiconductor substrate. An ion enhanced isolation layer separates the first well in the first circuit area and the second well in the second circuit areas from the isolation ring and the buried isolation layer, thereby preventing punch-through between the wells of the circuit areas and the buried isolation layer.