The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Jan. 31, 2005
Applicants:
Chia-shun Hsiao, Cupertino, CA (US);
Dong Jun Kim, San Jose, CA (US);
Inventors:
Chia-Shun Hsiao, Cupertino, CA (US);
Dong Jun Kim, San Jose, CA (US);
Assignee:
Promos Technologies Pte. Ltd., Districentre, SG;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and structure are provided with reduced gate wrap around to advantageously control for threshold voltage and increase stability in semiconductor devices. A spacer is provided aligned to field dielectric layers to protect the dielectric layers during subsequent etch processes. The spacer is then removed prior to subsequently forming a part of a gate oxide layer and a gate conductor layer. Advantageously, the spacer protects the corner area o the field dielectric and also allows for enhanced thickness of the gate oxide near the corners.