The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Nov. 12, 2004
Applicants:
Thorsten Kammler, Ottendorf-Okrilla, DE;
Karsten Wieczorek, Dresden, DE;
Christoph Schwan, Gebhardshain, DE;
Inventors:
Thorsten Kammler, Ottendorf-Okrilla, DE;
Karsten Wieczorek, Dresden, DE;
Christoph Schwan, Gebhardshain, DE;
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
By heat treating a silicon dioxide liner prior to patterning a silicon nitride spacer layer, the etch selectivity of the silicon dioxide with respect to the silicon nitride is increased, thereby reducing or eliminating the problem of pitting through the silicon dioxide layer. This allows further scaling of the devices, wherein an extremely thin silicon dioxide liner is required to obtain an accurate lateral patterning of the dopant profile in the drain and source regions.