The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Sep. 24, 2003
Christian Dussarrat, Ibaraki, JP;
Jean-marc Girard, Paris, FR;
Takako Kimura, Ibaraki, JP;
Naoki Tamaoki, Tokyo, JP;
Yuusuke Sato, Tokyo, JP;
Christian Dussarrat, Ibaraki, JP;
Jean-Marc Girard, Paris, FR;
Takako Kimura, Ibaraki, JP;
Naoki Tamaoki, Tokyo, JP;
Yuusuke Sato, Tokyo, JP;
Abstract
Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber. This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.