The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Jun. 25, 2003
Takayuki Toshima, Yamanashi-Ken, JP;
Kinya Ueno, Nirasaki, JP;
Miyako Yamasaka, Yamanashi-ken, JP;
Hideyuki Tsutsumi, Kawasaki, JP;
Tadashi Iino, Nirasaki, JP;
Yuji Kamikawa, Kumamoto-ken, JP;
Takayuki Toshima, Yamanashi-Ken, JP;
Kinya Ueno, Nirasaki, JP;
Miyako Yamasaka, Yamanashi-ken, JP;
Hideyuki Tsutsumi, Kawasaki, JP;
Tadashi Iino, Nirasaki, JP;
Yuji Kamikawa, Kumamoto-ken, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.