The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Sep. 07, 2005
Jyh-nan Cheng, Toucheng Township, Yilan County, TW;
Fang-mei Chao, Dadu Township, Taichung County, TW;
Yii-chian LU, Taipei, TW;
Jyh-Nan Cheng, Toucheng Township, Yilan County, TW;
Fang-Mei Chao, Dadu Township, Taichung County, TW;
Yii-Chian Lu, Taipei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
The invention provides an ESD protection structure, compatible with the bipolar-CMOS-DMOS (BCD) processes, which provides an enhanced protection performance and better heat dissipation performance. The design of the ESD structures in present invention takes advantage of bipolar punch characteristics of the parasitic bipolar structure to bypass the ESD current, thus significantly reducing the trigger voltage and increasing the ESD protection level. In addition, the ESD protection circuit of the present invention can improve heat dissipation by avoid current crowding near the surface.