The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Mar. 04, 2003
Koji Ohno, Gifu-ken, JP;
Chiyo Horikawa, Gifu-ken, JP;
Kenji Sakai, Aichi-ken, JP;
Kazusei Tamai, Aichi-ken, JP;
Katsuyoshi Ina, Aichi-ken, JP;
Koji Ohno, Gifu-ken, JP;
Chiyo Horikawa, Gifu-ken, JP;
Kenji Sakai, Aichi-ken, JP;
Kazusei Tamai, Aichi-ken, JP;
Katsuyoshi Ina, Aichi-ken, JP;
Fujimi Incorporated, Aichi, JP;
Abstract
A polishing composition capable of satisfactorily polishing a semiconductor. The first polishing composition of the present invention includes silicon dioxide, at least one component selected from periodic acids and salts thereof, at least one component selected from tetraalkyl ammonium hydroxides and tetraalkyl ammonium chlorides, hydrochloric acid, and water, and contains substantially no iron. The second polishing composition of the present invention includes a predetermined amount of fumed silica, a predetermined amount of at least one component selected from periodic acids and salts thereof, a tetraalkyl ammonium salt represented by the following general formula (1), at least one component selected from ethylene glycol and propylene glycol, and water. The pH of the second polishing composition is greater than or equal to 1.8 and is less than 4.0.