The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Aug. 02, 2005
Applicant:
Osamu Takaoka, Chiba, JP;
Inventor:
Osamu Takaoka, Chiba, JP;
Assignee:
SII Nano Technology Inc., Chiba, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
By entering a low acceleration Si ion beam of 500 V or lower or a low acceleration Si ion beam of 500 V-2000 V having been slanted such that an injection depth becomes shallow, which has been mass-separated from a liquid alloy ion source containing Si by a mass separator and converged by an ion optical system, the amplitude defect near a surface of the Mo/Si multilayer film or the MoC/Si multilayer film is removed by a physical sputter or a gas assist etching such that an interlayer of the Mo/Si multilayer film or the MoC/Si multilayer film in a lower layer is not destroyed.