The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Dec. 12, 2003
Kazuhito Ichinose, Sanda, JP;
Hidetsugu Ogishi, Hachioji, JP;
Ken Okutani, Tachikawa, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A low resistance Co silicide layer with less leakage current is formed over the surface of the source and drain of a MISFET by optimizing the film forming conditions and annealing conditions upon formation of Co (cobalt) silicide. More specifically, a low resistance source and drain (ntype semiconductor regions, ptype semiconductor regions) with less junction leakage current are formed, upon formation of a Co silicide layer by heat treating a Co film deposited over the source and drain (ntype semiconductor regions, ptype semiconductor regions) of the MISFET, by depositing the Co film at a temperature as low as 200° C. or less, carrying out heat treatment in three stages to convert the Co silicide layer from a dicobalt silicide (CoSi) layer to a cobalt monosilicide (CoSi) layer and, then, to a cobalt disilicide (CoSi) layer, successively.