The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2007
Filed:
Mar. 16, 2005
Kuo-nan Yang, Taipei, TW;
Yi-ling Chang, Miro-Li, TW;
You-lin Chu, Taichung, TW;
Hou-yu Chen, Kanhsing, TW;
Fu-liang Yang, Hsin-Chu, TW;
Chenming HU, Alamo, CA (US);
Kuo-Nan Yang, Taipei, TW;
Yi-Ling Chang, Miro-Li, TW;
You-Lin Chu, Taichung, TW;
Hou-Yu Chen, Kanhsing, TW;
Fu-Liang Yang, Hsin-Chu, TW;
Chenming Hu, Alamo, CA (US);
Taiwan Semiconductor Manufacturing Company, Inc., Hsin-Chu, TW;
Abstract
A semiconductor structure and a method for its manufacture are provided. In one example, the structure includes a well region doped with a first type dopant (e.g., a P-type or N-type dopant). A gate pedestal formed over the well region has two ends, one of which at least partially overlies the well region and is doped with the first type dopant. A dielectric layer is positioned between the gate pedestal and the well region. Source and drain regions formed on opposite sides of the gate pedestal within the well region are doped with a second type dopant opposite in type to the first type dopant.