The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2007
Filed:
Jun. 30, 2005
Applicants:
Jeng-huey Hwang, Hsin-Chu, TW;
Wei-tsun Shiau, Kao-Hsiung Hsien, TW;
Chien-ting Lin, Hsin-Chu, TW;
Jiunn-ren Hwang, Hsin-Chu, TW;
Inventors:
Jeng-Huey Hwang, Hsin-Chu, TW;
Wei-Tsun Shiau, Kao-Hsiung Hsien, TW;
Chien-Ting Lin, Hsin-Chu, TW;
Jiunn-Ren Hwang, Hsin-Chu, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A wafer has a trench, a STI layer formed in the trench, an HfO2-containing gate dielectric covering the wafer and the STI layer, a gate electrode formed on the HfO2-containing gate dielectric, and at least a spacer formed beside the gate electrode. The wafer is preheated and a bromine-rich gas plasma is provided to remove portions of the HfO2-containing gate dielectric.