The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2007
Filed:
Mar. 24, 2003
Kazuo Ogawa, Tokyo, JP;
Kiyonori Ohyu, Tokyo, JP;
Kensuke Okonogi, Tokyo, JP;
Toshihiro Imamura, Tokyo, JP;
Keiichi Watanabe, Tokyo, JP;
Hiroyuki Ohta, Tsuchiura, JP;
Kazuo Ogawa, Tokyo, JP;
Kiyonori Ohyu, Tokyo, JP;
Kensuke Okonogi, Tokyo, JP;
Toshihiro Imamura, Tokyo, JP;
Keiichi Watanabe, Tokyo, JP;
Hiroyuki Ohta, Tsuchiura, JP;
Elpida Memory, Inc., , JP;
Abstract
In a method for manufacturing a semiconductor device having a laminated gate electrode, a phosphorus-doped polysilicon is formed on a gate oxide film. A high-melting metal or a compound of a high-melting metal and silicon is formed on the polysilicon. Phosphorus is doped into the polysilicon so that a concentration of the phosphorus in the polysilicon at an interface between the polysilicon and the gate oxide film is 2×10(1/cm) or less. Then, thermal oxidation is carried out in a wet-hydrogen atmosphere containing water vapor.