The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Apr. 14, 2004
Robin Lynn Almes, Sunnyvale, CA (US);
Mark Anthony Church, Los Gatos, CA (US);
Mary Kathyrn Gutberlet, Prunedale, CA (US);
Jiunn Tsay, San Jose, CA (US);
Benjamin LU Chen Wang, San Jose, CA (US);
Robin Lynn Almes, Sunnyvale, CA (US);
Mark Anthony Church, Los Gatos, CA (US);
Mary Kathyrn Gutberlet, Prunedale, CA (US);
Jiunn Tsay, San Jose, CA (US);
Benjamin Lu Chen Wang, San Jose, CA (US);
Hitachi Global Storage Technologies, Amsterdam, NL;
Abstract
A charge-balanced, continuous-write mask and wafer process changes the magneto resistive photo-definition step to a two-mask step operation. Critical images are written on one mask layer at a very small electron beam spot size, and non-critical images are written on a second mask layer at a relatively larger electron beam spot size. Both mask layers are put onto the same glass substrate where the critical mask layer is located at the most accurate position on the substrate. The non-critical images may be placed in a peripheral field. In wafer processing, the critical field is aligned and exposed onto the wafer and then the non-critical field is aligned and exposed.