The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Dec. 01, 2003
Chi-wen Liu, Hsinchu, TW;
Jung-chih Tsao, Taipei, TW;
Shien-ping Feng, Taipei, TW;
Kei-wei Chen, Taipei, TW;
Shih-chi Lin, Taipei, TW;
Ray Chuang, Taipei, TW;
Chi-Wen Liu, Hsinchu, TW;
Jung-Chih Tsao, Taipei, TW;
Shien-Ping Feng, Taipei, TW;
Kei-Wei Chen, Taipei, TW;
Shih-Chi Lin, Taipei, TW;
Ray Chuang, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of reducing the pattern effect in the CMP process. The method comprises the steps of providing a semiconductor substrate having a patterned dielectric layer, a barrier layer on the patterned dielectric layer, and a conductive layer on the barrier layer; performing a first CMP process to remove part of the conductive layer before the barrier layer is polished, thereby a step height of the conductive layer is reduced; depositing a layer of material substantially the same as the conductive layer on the conductive layer; and performing a second CMP process to expose the dielectric layer. A method of eliminating the dishing phenomena after a CMP process and a CMP rework method are also provided.