The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2007

Filed:

Nov. 15, 2004
Applicant:

Kazuhisa Arai, Tokyo, JP;

Inventor:

Kazuhisa Arai, Tokyo, JP;

Assignee:

Disco Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor wafer wherein a film is formed on a back surface of a starting semiconductor wafer formed with circuits in a front surface thereof. To prevent the semiconductor wafer from warping even when it is worked as very thin as 100 μm or below and to form the film uniformly on the back surface of the semiconductor wafer, the method includes a unification step of supporting the front surface of the semiconductor wafer on a support baseplate having a flat support surface, and then unifying the support baseplate and the semiconductor wafer with each other, a grinding work step of grinding the back surface of the semiconductor wafer to thin; and a film formation step of forming a film on the back surface of the semiconductor wafer with use of a film formation apparatus; wherein a protective tape capable of being tom off is stuck onto a back surface of the support baseplate at said unification step, so as to perform the subsequent grinding work step with the protective tape borne on the support baseplate; and a protective-tape tearing off and removal step of tearing off and removing the protective tape is carried out before performing said film formation step.


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