The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Nov. 14, 2000
Franz Hofmann, Munich, DE;
Wolfgang Roesner, Ottobrunn, DE;
Lothar Risch, Neubiberg, DE;
Till Schloesser, Dresden, DE;
Franz Hofmann, Munich, DE;
Wolfgang Roesner, Ottobrunn, DE;
Lothar Risch, Neubiberg, DE;
Till Schloesser, Dresden, DE;
Infineon Technologies AG, , DE;
Abstract
The invention relates to a transistor that is provided with a first source/drain area (S/D), a channel area (KA) adjacent thereto, a second source/drain area (S/D) adjacent thereto, a gate dielectric and a gate electrode. A first capacitor electrode (SP) of the capacitor is connected to the first source/drain area (S/D). An insulating structure entirely surrounds an insulating area of the circuit arrangement. At least the first capacitor electrode (SP) and the first source/drain area (S/D) are arranged in the insulating area. The second source/drain area (S/D) and the second capacitor electrode of the capacitor are arranged outside the insulating area. The insulating structure prevents the first capacitor electrode (SP) from loosing charge through leaking currents between charging and discharging of the capacitor. A tunnel barrier (T) which is arranged in the channel area (KA) is part of the insulating structure. A capacitor dielectric (KD) that separates the first capacitor electrode (SP) from the second capacitor electrode is part of the insulating structure.