The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Feb. 23, 2004
Feng Wang, Fremont, CA (US);
Michelle T. Schulberg, Palo Alto, CA (US);
Jianing Sun, San Jose, CA (US);
Raashina Humayun, San Jose, CA (US);
Patrick A. Van Cleemput, La Tronche, FR;
Feng Wang, Fremont, CA (US);
Michelle T. Schulberg, Palo Alto, CA (US);
Jianing Sun, San Jose, CA (US);
Raashina Humayun, San Jose, CA (US);
Patrick A. Van Cleemput, La Tronche, FR;
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Methods of preparing a low-k dielectric material on a substrate are provided. The methods involve using plasma techniques to remove porogen from a precursor layer comprising porogen and a dielectric matrix and to protect the dielectric matrix with a silanol capping agent, resulting in a low-k dielectric matrix. Porogen removal and silanol capping can occur concurrently or sequentially. If performed sequentially, silanol capping is performed without first exposing the dielectric matrix to moisture or ambient conditions.