The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Jun. 06, 2003
Nobutaka Mizutani, Nirasaki, JP;
Fitrianto, Nirasaki, JP;
Isao Tsukagoshi, Nirasaki, JP;
Keizo Hirose, Nirasaki, JP;
Satohiko Hoshino, Nirasaki, JP;
Nobutaka Mizutani, Nirasaki, JP;
Fitrianto, Nirasaki, JP;
Isao Tsukagoshi, Nirasaki, JP;
Keizo Hirose, Nirasaki, JP;
Satohiko Hoshino, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A porous low-k film, a sacrificial film that can be dissolved in a pure water, an antireflection film and a resist film are successively formed on a dielectric film on a wafer and subsequently exposing the resist film to light in a prescribed pattern and developing the resist film so as to form a prescribed circuit pattern in the resist film. Then, the wafer W is etched so as to form a via hole in the porous low-k film, followed by processing the wafer with a hydrogen peroxide solution so as to denature the resist film. Further, the sacrificial film is dissolved in a pure water so as to strip the resist film and the antireflection film from the water. As a result, a via hole excellent in the accuracy of the shape is formed without doing damage to the dielectric film.