The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Jul. 26, 2001
Ronald A. Weimer, Boise, ID (US);
Scott J. Deboer, Boise, ID (US);
Dan Gealy, Kuna, ID (US);
Husam N. Al-shareef, Al-Ain, AE;
Ronald A. Weimer, Boise, ID (US);
Scott J. DeBoer, Boise, ID (US);
Dan Gealy, Kuna, ID (US);
Husam N. Al-Shareef, Al-Ain, AE;
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of fabricating a semiconductor device includes depositing a dielectric film and subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber. The technique can be used, for example, in the formation of various elements in an integrated circuit, including gate dielectric films as well as capacitive elements. The tight temperature control provided by the RTP process allows the wet oxidation to be performed quickly so that the oxidizing species does not diffuse significantly through the dielectric film and diffuse into an underlying layer. In the case of capacitive elements, the technique also can help reduce the leakage current of the dielectric film without significantly reducing its capacitance.