The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2007
Filed:
Jan. 20, 2004
Chin-kun Fang, Tainan, TW;
Kun-pi Cheng, Tainan, TW;
Wei-jen Wu, Tainan, TW;
Ching-jiunn Huang, Changhua, TW;
Chung-jen Chen, Tainan, TW;
Chin-Kun Fang, Tainan, TW;
Kun-Pi Cheng, Tainan, TW;
Wei-Jen Wu, Tainan, TW;
Ching-Jiunn Huang, Changhua, TW;
Chung-Jen Chen, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor process wafer having substantially co-planar active areas and a laser marked area in an adjacent inactive area and method for forming the same to eliminate a step height and improve a subsequent patterning process over the active areas wherein an inactive area trench is formed overlying the laser marked area in parallel with formation of STI trenches in the active area whereby the active areas and the inactive area are formed substantially co-planar without a step height.