The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Sep. 16, 2003
Applicants:
Kangguo Cheng, Beacon, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Rama Divakaruni, Ossining, NY (US);
Oleg G. Gluschenkov, Poughkeepsie, NY (US);
Inventors:
Kangguo Cheng, Beacon, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Rama Divakaruni, Ossining, NY (US);
Oleg G. Gluschenkov, Poughkeepsie, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A trench capacitor vertical-transistor DRAM cell in a SiGe wafer compensates for overhang of the pad nitride by forming an epitaxial strained silicon layer on the trench walls that improves transistor mobility, removes voids from the poly trench fill and reduces resistance on the bitline contact.