The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
Dec. 30, 2004
Sang Hun OH, Bucheon, KR;
Sang Hun Oh, Bucheon, KR;
Dongbu Electronics, Seoul, KR;
Abstract
A method for fabricating a split gate flash memory includes depositing a second conductive layer for forming a control gate on a semiconductor substrate having a first conductive layer, an insulating layer, and an oxide layer on both sides of the first conductive layer formed thereon, filling an anti-implant protective layer in a depression of the second conductive layer, performing ion implant on the second conductive layer, removing the anti-implant protective layer filled in the depression of the second conductive layer, forming a photoresist pattern by depositing a photoresist layer on the second conductive layer for forming a control gate, and treating the photoresist layer with a light exposure and a development process, and forming the control gate by etching the second conductive layer.