The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2007
Filed:
Dec. 10, 2003
Wenxian Zhu, Palo Alto, CA (US);
Jengyi Yu, San Jose, CA (US);
Siswanto Sutanto, San Jose, CA (US);
Pingsheng Sun, San Jose, CA (US);
Jeffrey Chih-hou Lowe, Milpitas, CA (US);
Waikit Fung, Cupertino, CA (US);
Tze Wing Poon, Sunnyvale, CA (US);
Wenxian Zhu, Palo Alto, CA (US);
Jengyi Yu, San Jose, CA (US);
Siswanto Sutanto, San Jose, CA (US);
Pingsheng Sun, San Jose, CA (US);
Jeffrey Chih-Hou Lowe, Milpitas, CA (US);
Waikit Fung, Cupertino, CA (US);
Tze Wing Poon, Sunnyvale, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Biased plasma etch processes incorporating Hetch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.