The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Oct. 22, 2002
Yen-ming Chen, Hsin-Chu, TW;
Huan-chi Tseng, Hsin-Chu, TW;
Yu-hua Lee, Hsinchu, TW;
Dian-hau Chen, Hsinchu, TW;
Chia-hung Lai, Taichung, TW;
Kang-min Kuo, Hsin-chu, TW;
Yen-Ming Chen, Hsin-Chu, TW;
Huan-Chi Tseng, Hsin-Chu, TW;
Yu-Hua Lee, Hsinchu, TW;
Dian-Hau Chen, Hsinchu, TW;
Chia-Hung Lai, Taichung, TW;
Kang-Min Kuo, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for fabricating a microelectronic fabrication employs an undoped silicate glass layer as an etch stop layer when etching a doped silicate glass layer with an anhydrous hydrofluoric acid etchant. The method is particularly useful for forming a patterned salicide blocking dielectric layer when fabricating a complementary metal oxide semiconductor device.