The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Apr. 12, 2002
Edward Aloys Gerard Hamers, Eindhoven, NL;
Arno Hendrikus Marie Smets, Maasbree, NL;
Mauritius Cornelius Maria Van DE Sanden, Tilburg, NL;
Daniel Cornelis Schram, Eindhoven, NL;
Edward Aloys Gerard Hamers, Eindhoven, NL;
Arno Hendrikus Marie Smets, Maasbree, NL;
Mauritius Cornelius Maria Van De Sanden, Tilburg, NL;
Daniel Cornelis Schram, Eindhoven, NL;
Technische Universiteit, Eindhoven, NL;
Abstract
In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate () is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location () where the source fluid is supplied and the substrate (). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate () is exposed to both the source fluid and the auxiliary fluid.