The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Feb. 24, 2005
Akihiko Ishibashi, Osaka, JP;
Ayumu Tsujimura, Osaka, JP;
Yoshiaki Hasegawa, Osaka, JP;
Nobuyuki Otsuka, Hyogo, JP;
Gaku Sugahara, Nara, JP;
Ryoko Miyanaga, Nara, JP;
Toshitaka Shimamoto, Osaka, JP;
Kenji Harafuji, Osaka, JP;
Yuzaburo Ban, Osaka, JP;
Kiyoshi Ohnaka, Osaka, JP;
Akihiko Ishibashi, Osaka, JP;
Ayumu Tsujimura, Osaka, JP;
Yoshiaki Hasegawa, Osaka, JP;
Nobuyuki Otsuka, Hyogo, JP;
Gaku Sugahara, Nara, JP;
Ryoko Miyanaga, Nara, JP;
Toshitaka Shimamoto, Osaka, JP;
Kenji Harafuji, Osaka, JP;
Yuzaburo Ban, Osaka, JP;
Kiyoshi Ohnaka, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.