The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Feb. 13, 2004
Cesar M. Garza, Round Rock, TX (US);
William D. Darlington, Austin, TX (US);
Stanley M. Filipiak, Pflugerville, TX (US);
James E. Vasek, Austin, TX (US);
Cesar M. Garza, Round Rock, TX (US);
William D. Darlington, Austin, TX (US);
Stanley M. Filipiak, Pflugerville, TX (US);
James E. Vasek, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor device is made by patterning a conductive layer for forming gates of transistors. The process for forming the gates has a step of patterning photoresist that overlies the conductive layer. The patterned photoresist is trimmed so that its width is reduced. Fluorine, preferably F, is applied to the trimmed photoresist to increase its hardness and its selectivity to the conductive layer. Using the trimmed and fluorinated photoresist as a mask, the conductive layer is etched to form conductive features useful as gates. Transistors are formed in which the conductive pillars are gates. Other halogens, especially chlorine, may be substituted for the fluorine.