The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Jun. 04, 2004
Hway Chi Lin, Hsinchu, TW;
Yi-lung Cheng, Danshuei Township, Taipei County, TW;
Chao-hsiung Wang, Hsin-Chu, TW;
Hway Chi Lin, Hsinchu, TW;
Yi-Lung Cheng, Danshuei Township, Taipei County, TW;
Chao-Hsiung Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A substrate is provided having semiconductor device structures formed in and on the substrate. The semiconductor device structures comprise conductor layers embedded in openings in dielectric layers having a dielectric constant of less than 4.5. The dielectric layer has a roughness between the dielectric and the conductor wherein the roughness of the dielectric layer divided by the thickness of a barrier layer underlying the conductor layer is 0 to 1. The integrated circuit structure is prepared for failure analysis by removing the low dielectric constant dielectric layers and exposing the conductor layers for further failure analysis by optical examination or scanning electron microscope (SEM).