The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Jul. 02, 2004
Applicants:
Hyeon-seag Kim, San Jose, CA (US);
Amit Marathe, Sunnyvale, CA (US);
Kurt Taylor, San Jose, CA (US);
Inventors:
Hyeon-Seag Kim, San Jose, CA (US);
Amit Marathe, Sunnyvale, CA (US);
Kurt Taylor, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
For determining a failure characteristic of a semiconductor device, a leakage current characteristic is measured for the semiconductor device to determine a plurality of stress bias zones. A respective set of parameters that define a respective failure characteristic of the semiconductor device is determined for each of the stress bias zones such that the failure characteristic is accurately determined for a wide range of operating voltages.