The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Apr. 26, 2006
Hiroyuki Uchiyama, Tachikawa, JP;
Hiraku Chakihara, Akishima, JP;
Teruhisa Ichise, Ome, JP;
Michimoto Kaminaga, Hitachinaka, JP;
Hiroyuki Uchiyama, Tachikawa, JP;
Hiraku Chakihara, Akishima, JP;
Teruhisa Ichise, Ome, JP;
Michimoto Kaminaga, Hitachinaka, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A large area dummy pattern DL is formed in a layer underneath a target Tregion formed in a scribe region SR of a wafer. A small area dummy pattern in a lower layer and a small area dummy pattern Dsin an upper layer are disposed in a region where the inter-pattern space of a pattern (active regions L, L, L, gate electrode), which functions as an element of a product region PR and scribe region SR, is wide. The small area dummy pattern Dsin the upper layer is offset by ½ pitch relative to the small area dummy pattern Ds in the lower layer.