The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Oct. 06, 1998
Yasuo Kohsaka, Yokohama, JP;
Yoshiharu Fukasawa, Yokohama, JP;
Yoshiko Tsuji, Kawasaki, JP;
Mitsushi Ikeda, Yokohama, JP;
Michio Sato, Yokohama, JP;
Toshihiro Maki, Yokohama, JP;
Yasuo Kohsaka, Yokohama, JP;
Yoshiharu Fukasawa, Yokohama, JP;
Yoshiko Tsuji, Kawasaki, JP;
Mitsushi Ikeda, Yokohama, JP;
Michio Sato, Yokohama, JP;
Toshihiro Maki, Yokohama, JP;
Kabushiki Kaisha Toshiba, , JP;
Abstract
A Mo—W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo—W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo—W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo—W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo—W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo—W wiring thin film to be produced with high repeatability.