The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2006

Filed:

Apr. 28, 2005
Applicants:

Tai-chun Huang, Hsin-Chu, TW;

Chih-hsiang Yao, Taipei, TW;

Kuan-shou Chi, Hsinchu, TW;

Chin-chiu Hsia, Taipei, TW;

Mong-song Liang, Hsin-Chu, TW;

Inventors:

Tai-Chun Huang, Hsin-Chu, TW;

Chih-Hsiang Yao, Taipei, TW;

Kuan-Shou Chi, Hsinchu, TW;

Chin-Chiu Hsia, Taipei, TW;

Mong-Song Liang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

Described are methods and structures for mitigating the effects of mechanical stresses placed on the layers of semiconductor devices, and specifically disclosed are methods and structures for mitigating the diminished chemical bonds between etch-stop layers and other semiconductor device layers. The disclosed methods and structures use different structures and/or processes for some of the etch-stop layers in a device.


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