The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2006
Filed:
Feb. 02, 2005
Pei-ren Jeng, Hsinchu, TW;
Hsuan-ling Kao, Taipei, TW;
Pei-Ren Jeng, Hsinchu, TW;
Hsuan-Ling Kao, Taipei, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method of improving flash memory performance. The method includes: providing a substrate having a gate structure thereon, the gate structure having a gate dielectric layer, a first polysilicon layer, an interploy dielectric layer, and a second polysilicon layer; then, depositing an gate insulating layer to enclose the gate structure, for forming side wall spacers; next, performing a first anneal on the substrate and the enclosed gate structure; then, performing a cell reoxidation on the substrate and the enclosed gate structure by dilute oxidation process using mixed gas comprising oxygen O2 and nitrogen N2. The invention reduces encroachment issues in the interpoly dielectric layer and the tunnel oxide and improves gate coupling ratio (GCR).