The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Oct. 22, 2002
Hsia Liang Choo, Singapore, SG;
John Sudijono, Singapore, SG;
Liu Huang, Singapore, SG;
Tan Juan Boon, Singapore, SG;
Hsia Liang Choo, Singapore, SG;
John Sudijono, Singapore, SG;
Liu Huang, Singapore, SG;
Tan Juan Boon, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method of forming phoslon (PNO) comprising the following steps. A CVD reaction chamber having a reaction temperature of from about 300 to 600° C. is provided. From about 10 to 200 sccm PHgas, from about 50 to 4000 sccm Ngas and from about 50 to 1000 sccm NHgas are introduced into the CVD reaction chamber. Either from about 10 to 200 sccm Ogas or from about 50 to 1000 sccm NO gas is introduced into the CVD reaction chamber. An HFRF power of from about 0 watts to 4 kilowatts is also employed. An LFRF power of from about 0 to 5000 watts may also be employed. Employing a phoslon etch stop layer in a borderless contact fabrication. Employing a phoslon lower etch stop layer and/or a phoslon middle etch stop layer in a dual damascene fabrication.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile