The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Mar. 27, 2003
Applicants:
Karsten Wieczorek, Dresden, DE;
Manfred Horstmann, Dresden, DE;
Rolf Stephan, Dresden, DE;
Inventors:
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
Polysilicon lines are formed, featuring an upper portion extending beyond the lower portion that defines the required CD. Accordingly, metal silicide layers of increased dimensions can be formed on the upper portion of the polysilicon lines so that the resulting gate structures exhibit a very low final sheet resistance. Moreover, in situ sidewall spacers are realized during the process for forming the polysilicon lines and without additional steps and/or costs.
Wieczorek, Karsten. (2006). Semiconductor device having t-shaped gate structure comprising in situ sidewall spacers and method of forming the semiconductor device (U.S. Patent No. 7148145). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7148145
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile