The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Aug. 16, 2004
Dun-nian Yaung, Taipei, TW;
Sou-kuo Wu, Hsinchu, TW;
Ho-ching Chien, Hsinchu, TW;
Chien-hsien Tseng, Hsinchu, TW;
Jeng-shyan Lin, Tainan, TW;
Dun-Nian Yaung, Taipei, TW;
Sou-Kuo Wu, Hsinchu, TW;
Ho-Ching Chien, Hsinchu, TW;
Chien-Hsien Tseng, Hsinchu, TW;
Jeng-Shyan Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped region of a second conductivity type. Each doped region of the first conductivity type is beneath a corresponding trench. Each doped region of the second conductivity type is sandwiched between the corresponding doped region and the substrate of the first conductivity type. No edge of any doped region of the first or second conductivity type extends to the trench corners. A method of fabricating the photo sensor is also provided.