The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Sep. 30, 2003
Ji-soo Kim, Seongnam, KR;
Wan-jae Park, Suwon, KR;
Kyoung-sub Shin, Seongnam, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
In a method for determining the degree of charge-up induced by plasma used for manufacturing a semiconductor device and an apparatus therefor, a predetermined region on a surface of a wafer on which a plasma process has been performed is repeatedly scanned with a primary electron beam. Secondary electrons generated by a reaction between the primary electron beam and the surface of the wafer that are emitted to the outside of the surface of the wafer are collected. The degree of charge-up induced at the surface of the wafer by the plasma used during the plasma process is determined from the change in the amount of collected secondary electrons. Determination as to whether a contact hole is opened or as to the degree of degradation of a gate insulating layer is made based on the degree of charge-up.