The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Jul. 29, 2004
Byoung W. Min, Austin, TX (US);
Nigel G. Cave, Austin, TX (US);
Venkat R. Kolagunta, Austin, TX (US);
Omar Zia, Austin, TX (US);
Sinan Goktepeli, Austin, TX (US);
Byoung W. Min, Austin, TX (US);
Nigel G. Cave, Austin, TX (US);
Venkat R. Kolagunta, Austin, TX (US);
Omar Zia, Austin, TX (US);
Sinan Goktepeli, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
In one embodiment, a method for forming a semiconductor device is described. A semiconductor substrate has a first portion and a second portion. A first dielectric layer formed over the first portion of the semiconductor substrate and a second dielectric layer is formed over the second portion of the semiconductor substrate. A cap that may include silicon, such as polysilicon, is formed over the first dielectric layer. A first electrode layer is formed over the cap and a second electrode layer is formed over the second dielectric.