The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Oct. 21, 2004
Fei-yun Chen, Hsin Chu, TW;
Jen-shian Shieh, Hsinchu, TW;
Hao-chih Yuan, Taipei, TW;
Yuan-ko Hwang, Hualien, TW;
Shih-shiung Chen, Chiayi, TW;
Fei-Yun Chen, Hsin Chu, TW;
Jen-Shian Shieh, Hsinchu, TW;
Hao-Chih Yuan, Taipei, TW;
Yuan-Ko Hwang, Hualien, TW;
Shih-Shiung Chen, Chiayi, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present subject matter relates to a method of stripping a photoresist after the photoresist film has been subjected to a high dose and high energy ion implant process. The method involves soaking the photoresist film in DI water, dry etching with oxygen plasma, and immersing in Caro's acid solution to improve the throughput of removing the film from the underlying substrate. The method can also be used to strip photoresist that has been hardened or altered by other types of processes such as dry etch transfer steps and chemical treatments. In some applications, the dry etching step may be omitted from the stripping process or the dry etching step may be combined with the water soak in an integrated process.