The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2006

Filed:

Mar. 20, 2002
Applicants:

Toshiyuki Makiya, Tachikawa, JP;

Takanori Saito, Shiroyama-Machi, JP;

Karuki Eickmann, Shiroyama-Machi, JP;

Sanjeev Kaushal, Austin, TX (US);

Anthony Dip, Austin, TX (US);

David L. O'meara, Hopewell Junction, NY (US);

Inventors:

Toshiyuki Makiya, Tachikawa, JP;

Takanori Saito, Shiroyama-Machi, JP;

Karuki Eickmann, Shiroyama-Machi, JP;

Sanjeev Kaushal, Austin, TX (US);

Anthony Dip, Austin, TX (US);

David L. O'meara, Hopewell Junction, NY (US);

Assignee:

Tokyo Electron Limited, Tokyo-To, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 1/02 (2006.01); A21B 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A antireflective filmis formed on a thermocouplearranged in a processing vesselof a heat treatment apparatus in order to improve the transient response characteristics of the thermocouple. In a typical embodiment, the thermocoupleis made by connecting a platinum wireA and a platinum-rhodium alloy wireB, and the antireflective filmis composed by stacking a silicon nitride layerC, silicon layerB and a silicon nitride layerA in that order.


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