The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Oct. 01, 2003
Keisuke Kawamura, Nagasaki, JP;
Akira Yamada, Nagasaki, JP;
Hiroshi Mashima, Nagasaki, JP;
Yoshiaki Takeuchi, Nagasaki, JP;
Keisuke Kawamura, Nagasaki, JP;
Akira Yamada, Nagasaki, JP;
Hiroshi Mashima, Nagasaki, JP;
Yoshiaki Takeuchi, Nagasaki, JP;
Mitsubishi Heavy Industries, Ltd., Tokyo, JP;
Abstract
An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (), a ground electrode () is disposed, and a discharge electrode () is disposed opposite to the ground electrode (). A substrate () as a processing object is placed in close contact with the ground electrode (). A high-frequency voltage is applied to the discharge electrode () so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply () generates a first high-frequency voltage, and outputs the generated voltage on feeding points () disposed on a lateral portion of the discharge electrode (). An RF electric power supply () generates a second high-frequency voltage, and outputs the generated voltage on feeding points () disposed on another lateral portion of the discharge electrode (). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.