The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Nov. 12, 2003
Binghua HU, Plano, TX (US);
Howard S. Lee, Plano, TX (US);
Henry L. Edwards, Garland, TX (US);
John Lin, Chelmsford, MA (US);
Vladimir N. Bolkhovsky, Framingham, MA (US);
Binghua Hu, Plano, TX (US);
Howard S. Lee, Plano, TX (US);
Henry L. Edwards, Garland, TX (US);
John Lin, Chelmsford, MA (US);
Vladimir N. Bolkhovsky, Framingham, MA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A double diffused region (), (), () is formed in an epitaxial layer (). The double diffused region is formed by first implanting light implant specie such as boron through an opening in a photoresist layer prior to a hard bake process. Subsequent to a hard bake process heavy implant specie such as arsenic can be implanted into the epitaxial layer. During subsequent processing such as LOCOS formation the double diffused region is formed. A dielectric layer () is formed on the epitaxial layer () and gate structures (), () are formed over the dielectric layer ().