The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2006

Filed:

Jul. 25, 2003
Applicants:

Tatsuya Kishi, Kanagawa-ken, JP;

Shigeki Takahashi, Kanagawa-ken, JP;

Kentaro Nakajima, Tokyo, JP;

Minoru Amano, Kanagawa-ken, JP;

Masayuki Sagoi, Kanagawa-ken, JP;

Yoshiaki Saito, Kanagawa-ken, JP;

Inventors:

Tatsuya Kishi, Kanagawa-ken, JP;

Shigeki Takahashi, Kanagawa-ken, JP;

Kentaro Nakajima, Tokyo, JP;

Minoru Amano, Kanagawa-ken, JP;

Masayuki Sagoi, Kanagawa-ken, JP;

Yoshiaki Saito, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/127 (2006.01); H04R 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a magnetoresistance effect device, including: forming a first ferromagnetic body, a nonmagnetic dielectric layer on the first ferromagnetic body, and a second ferromagnetic body on the nonmagnetic dielectric layer; etching part of an external region of a predetermined ferromagnetic tunnel junction region using a first linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region; and etching another part of the external region of the predetermined ferromagnetic tunnel junction region using a second linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region and intersecting with the first linear mask pattern.


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