The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Feb. 01, 2005
Keng-chu Lin, Ping-Tung, TW;
Shwang-ming Cheng, Hsin-Chu, TW;
Ming Ling Yeh, Tainan, TW;
Tien-i Bao, Hsin-Chu, TW;
Keng-Chu Lin, Ping-Tung, TW;
Shwang-Ming Cheng, Hsin-Chu, TW;
Ming Ling Yeh, Tainan, TW;
Tien-I Bao, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor method of manufacturing involving porous and/or carbon containing, low-k dielectrics is provided. The method includes forming a hydrocarbon of the general composition CHon the surface of the low-k dielectric. The hydrocarbon layer includes depositing a precursor material, preferably CHor (CH)CHCHCH. In accordance with embodiments of this invention, carbon diffuses into the low-k dielectric, thereby reducing carbon depletion damage caused by plasma processing or etching. Surface dielectric pores damaged by plasma processing are also repaired by sealing them with the CHlayer. Embodiments include semiconductor devices, such as devices having damascene interconnect structures, manufacturing using methods provided.