The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Apr. 26, 2004
Wen-liang Lien, Taipei, TW;
Charlie C J Lee, Hsin-Chu Hsien, TW;
Chih-ning Wu, Hsin-Chu, TW;
Jain-hon Chen, Chia-I, TW;
Wen-Liang Lien, Taipei, TW;
Charlie C J Lee, Hsin-Chu Hsien, TW;
Chih-Ning Wu, Hsin-Chu, TW;
Jain-Hon Chen, Chia-I, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for avoiding resist poisoning during a damascene process is disclosed. A semiconductor substrate is provided with a low-k dielectric layer (k≦2.9) thereon, a SiC layer over the low-k dielectric layer, and a blocking layer over the SiC layer. The blocking layer is used to prevent unpolymerized precursors diffused out from the low-k dielectric layer from contacting an overlying resist. A bottom anti-reflection coating (BARC) layer is formed on the blocking layer. A resist layer is formed on the BARC layer, the resist layer having an opening to expose a portion of the BARC layer. A damascene structure is formed in the low-k dielectric layer by etching the BARC layer, the blocking layer, the SiC layer, and the low-k dielectric layer through the opening.