The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Mar. 17, 2005
Martin J. Binns, St. Charles, MO (US);
Robert J. Falster, London, GB;
Jeffrey L. Libbert, O'Fallon, MO (US);
Martin J. Binns, St. Charles, MO (US);
Robert J. Falster, London, GB;
Jeffrey L. Libbert, O'Fallon, MO (US);
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has at least a surface layer of high resistivity, the layer having an interstitial oxygen content which renders it incapable of forming thermal donors in an amount sufficient to affect resistivity upon being subjected to a conventional semiconductor device manufacturing process. The present invention further directed to a silicon on insulator structure derived from such a wafer.