The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2006

Filed:

Aug. 05, 2004
Applicants:

Takeru Watanabe, Niigata-ken, JP;

Tsunehiro Nishi, Niigata-ken, JP;

Junji Tsuchiya, Niigata-ken, JP;

Kenji Funatsu, Niigata-ken, JP;

Koji Hasegawa, Niigata-ken, JP;

Inventors:

Takeru Watanabe, Niigata-ken, JP;

Tsunehiro Nishi, Niigata-ken, JP;

Junji Tsuchiya, Niigata-ken, JP;

Kenji Funatsu, Niigata-ken, JP;

Koji Hasegawa, Niigata-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 1/73 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); C08F 124/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A polymer comprising recurring units of formulae (1), (2), (3) and (4) increases a dissolution rate in an alkali developer under the action of an acid. R, R, Rand Rare H or CH, Rand Rare H or OH, X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane framework, represented by any of formulae (X-1) to (X-4): wherein Ris C–Calkyl, and Y is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.


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