The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Oct. 14, 2003
Applicants:
Helen Zhu, Fremont, CA (US);
Rao Annapragada, Union City, CA (US);
Inventors:
Helen Zhu, Fremont, CA (US);
Rao Annapragada, Union City, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of etching a barrier layer in an integrated circuit (IC) wherein said barrier layer is composed of silicon nitride or silicon carbide. The method comprises receiving an etched IC structure having an exposed barrier layer. The method then proceeds to apply an etchant gas mixture comprising a nitrous oxide (NO) gas and a fluoromethane (CHF) gas. The etchant gas mixture provides a relatively high selectivity between the barrier layer to an adjacent dielectric layer.