The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2006

Filed:

Dec. 22, 2003
Applicants:

Anand Murthy, Portland, OR (US);

Nayanee Gupta, Portland, OR (US);

Chris Auth, Portland, OR (US);

Glenn A. Glass, Beaverton, OR (US);

Inventors:

Anand Murthy, Portland, OR (US);

Nayanee Gupta, Portland, OR (US);

Chris Auth, Portland, OR (US);

Glenn A. Glass, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and associated apparatus of forming a microelectronic structure are described. Those methods comprise providing a substrate comprising a region of higher active area density comprising source and drain recesses and a region of lower active area density comprising source and drain recesses, wherein the region of lower active area density further comprises dummy recesses, and selectively depositing a silicon alloy layer in the source, drain and dummy recesses to enhance the selectivity and uniformity of the silicon alloy deposition.


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