The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Sep. 30, 2002
James Powers, Aloha, OR (US);
Kevin P. O'brien, Portland, OR (US);
James Powers, Aloha, OR (US);
Kevin P. O'Brien, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method is disclosed of forming an air gap using etch back of an inter layer dielectric (ILD) with self-alignment to metal pattern. The method entails forming a first metallization layer deposited on a first dielectric, forming a second metallization layer deposited on a second dielectric, wherein the second metallization layer is spaced apart from the first metallization layer, forming a sacrificial ILD between the first and second metallization layers, forming a diffusion layer over the first and second metallization layers and over the sacrificial ILD, and removing the sacrificial ILD to form an air gap between the first and second metallization layers. This method is particular applicable for dual copper damascene processes.